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On experimental methods to investigate the effect of layer thickness on the fracture behavior of adhesively bonded joints
Fraunhofer IFAM, Bremen, Germany.
University of Skövde, School of Technology and Society. University of Skövde, The Virtual Systems Research Centre. (Mechanics of Materials)ORCID iD: 0000-0001-8335-0855
University of Skövde, School of Technology and Society. University of Skövde, The Virtual Systems Research Centre. (Mechanics of Materials)ORCID iD: 0000-0003-0787-4942
2011 (English)In: International Journal of Adhesion and Adhesives, ISSN 0143-7496, E-ISSN 1879-0127, Vol. 31, no 8, p. 840-850Article in journal (Refereed) Published
Abstract [en]

A number of different experimental methods are used at two independent laboratories to evaluate the influence of layer thickness on the fracture properties atone batch of a crash resistant epoxy adhesive. Both mode I and II are considered. Novel, as well as state of the art methods are used. In mode I, the Double Cantilever Beam (DCB) and two versions of the Tapered Double Cantilever Beam (TDCB) specimens are utilized; in mode II, two versions of the End Notch Flexure (ENF) and the End-Loaded Shear Joint (ELSJ) specimens are used. Good agreement between the test results is achieved for thin layers in both fracture modes. For thicker layers the variation is larger. (C) 2011 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
Elsevier, 2011. Vol. 31, no 8, p. 840-850
Keywords [en]
Adhesive bonding, Fracture mechanics, Energy release rate, (Tapered) Double Cantilever Beam (TDCB/DCB) test, End Notch Flexure (ENF) test, End-Loaded Shear Joint (ELSJ) test
National Category
Materials Engineering
Research subject
Technology; Mechanics of Materials
Identifiers
URN: urn:nbn:se:his:diva-5511DOI: 10.1016/j.ijadhadh.2011.08.004ISI: 000297086900007Scopus ID: 2-s2.0-80053984118OAI: oai:DiVA.org:his-5511DiVA, id: diva2:512926
Available from: 2012-03-29 Created: 2012-03-01 Last updated: 2020-07-03Bibliographically approved

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Biel, AndersStigh, Ulf

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