Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)AsShow others and affiliations
2011 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 23, no 8, article id 085003Article in journal (Refereed) Published
Abstract [en]
Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2011. Vol. 23, no 8, article id 085003
National Category
Physical Sciences
Research subject
Natural sciences; Physics and Mathematics
Identifiers
URN: urn:nbn:se:his:diva-5188DOI: 10.1088/0953-8984/23/8/085003ISI: 000287235700006Scopus ID: 2-s2.0-79951797257OAI: oai:DiVA.org:his-5188DiVA, id: diva2:429170
2011-07-042011-07-042020-07-07Bibliographically approved