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Theoretical investigation of energy shifts at the GaAs/Au interface
Chalmers University of Technology, Göteborg, Sweden.ORCID iD: 0000-0002-7023-4043
Chalmers University of Technology, Göteborg, Sweden.
Chalmers University of Technology, Göteborg, Sweden.
1988 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 67, no 4, p. 339-342Article in journal (Refereed) Published
Abstract [en]

We have used an image screening model to calculate the shift of the Ga(3d−1) core-level distribution when a GaAs surface is covered with metal. Using the GaAs bulk dielectric constant we find a shift of 0.1 (0.18) eV with a mean free path of 25 (8) Å. These shifts are comparable to the measured ones,1 indicating that final-state (image) screening represents an important part of core-level shifts in the vicinity of the interface.

Place, publisher, year, edition, pages
Elsevier, 1988. Vol. 67, no 4, p. 339-342
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:his:diva-22523DOI: 10.1016/0038-1098(88)91041-1ISI: A1988P402200003Scopus ID: 2-s2.0-0024053141OAI: oai:DiVA.org:his-22523DiVA, id: diva2:1756554
Note

Corresponding author: Krister Karlsson, Institute of Theoretical Physics, Chalmers University of Technology S-412 96 Göteborg, Sweden

Available from: 2023-05-12 Created: 2023-05-12 Last updated: 2023-05-12Bibliographically approved

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