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Final-state effects in photoemission from metal-semiconductor interfaces
Chalmers University of Technology, Göteborg, Sweden.ORCID iD: 0000-0002-7023-4043
Chalmers University of Technology, Göteborg, Sweden.
Chalmers University of Technology, Göteborg, Sweden.
1991 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 67, no 2, p. 236-239Article in journal (Refereed) Published
Abstract [en]

In this Letter we stress the importance of final-state effects in photoelectron spectroscopy. In particular, we address the problem of Schottky-barrier formation, as studied via core-level shifts in photoemission. We have calculated the shift of the core-level distribution when a semiconductor surface is covered with a metal, using a wave-vector-dependent image-screening model. We conclude that final-state effects, which are generally neglected in this context, are in fact quite important. This conclusion is supported by experimental observations reported in the literature. © 1991 The American Physical Society.

Place, publisher, year, edition, pages
American Physical Society, 1991. Vol. 67, no 2, p. 236-239
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Condensed Matter Physics
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URN: urn:nbn:se:his:diva-22513DOI: 10.1103/physrevlett.67.236ISI: A1991FV18200020Scopus ID: 2-s2.0-6144242429OAI: oai:DiVA.org:his-22513DiVA, id: diva2:1756065
Available from: 2023-05-10 Created: 2023-05-10 Last updated: 2023-05-10Bibliographically approved

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Karlsson, Krister

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