Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAsShow others and affiliations
2000 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 61, no 8, p. 5540-5545Article in journal (Refereed) Published
Abstract [en]
Ultrathin AlAs(100) layers of 1-, 2-, and 5-ML thickness buried in GaAs are investigated by ab initio calculations. Unique experimental soft-x-ray emission spectra are explained in terms of interface effects and changes with layer thickness are found in the density of states. Only the central layer in the 5-ML geometry is bulklike. A valence-band offset of 0.53 eV is also found for this structure, while no offset exists in the 1- and 2-ML cases. Very good agreement is achieved between theory and experiment.
Place, publisher, year, edition, pages
American Physical Society, 2000. Vol. 61, no 8, p. 5540-5545
National Category
Atom and Molecular Physics and Optics Condensed Matter Physics
Identifiers
URN: urn:nbn:se:his:diva-22122DOI: 10.1103/physrevb.61.5540ISI: 000085707000068Scopus ID: 2-s2.0-0003510424OAI: oai:DiVA.org:his-22122DiVA, id: diva2:1717512
2022-12-082022-12-082022-12-08Bibliographically approved