Direct observation of interface effects of thin AlAs(100) layers buried in GaAsShow others and affiliations
2000 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 166, no 1-4, p. 309-312Article in journal (Refereed) Published
Abstract [en]
A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L2,3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, which are reproduced using ab initio calculations.
Place, publisher, year, edition, pages
Elsevier, 2000. Vol. 166, no 1-4, p. 309-312
Keywords [en]
Interface, AlAs, Soft X-ray emission, Synchrotron radiation
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:his:diva-22107DOI: 10.1016/s0169-4332(00)00468-2ISI: 000089432000057Scopus ID: 2-s2.0-0342359204OAI: oai:DiVA.org:his-22107DiVA, id: diva2:1716263
2022-12-052022-12-052022-12-05Bibliographically approved