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Electronic structure of (Ga,Mn)As revisited
Chalmers University of Technology, Göteborg, Sweden.
Chalmers University of Technology, Göteborg, Sweden.
University of Skövde, School of Engineering Science. (Matematik och fysik)ORCID iD: 0000-0002-7023-4043
Department of Physics, University of Karachi, Pakistan.
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2017 (English)In: New Journal of Physics, ISSN 1367-2630, E-ISSN 1367-2630Article in journal (Refereed) Epub ahead of print
Abstract [en]

The detailed nature of electronic states mediating ferromagnetic coupling in

dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of

long debate. Two confronting models have been discussed emphasizing host

band vs. impurity band carriers. Using angle resolved photoemission we show

that the electronic structure of the (Ga,Mn)As system is significantly modified

from that of GaAs throughout the valence band. Close to the Fermi energy, the

presence of Mn induces a strong mixing of the bulk bands of GaAs, which

results in the appearance of a highly dispersive band in the gap region of GaAs.

For Mn concentrations above 1% the band reaches the Fermi level, and can

thus host the delocalized holes needed for ferromagnetic coupling. Overall, our

data provide a firm evidence of delocalized carriers belonging to the modified

host valence band.

Place, publisher, year, edition, pages
Institute of Physics (IOP), 2017.
Keyword [en]
Dilute magnetic semiconductors, band structure, magnetic coupling
National Category
Condensed Matter Physics
Research subject
Natural sciences
Identifiers
URN: urn:nbn:se:his:diva-13328DOI: 10.1088/1367-2630/aa5a42OAI: oai:DiVA.org:his-13328DiVA: diva2:1066728
Available from: 2017-01-19 Created: 2017-01-19 Last updated: 2017-01-20

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