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Electronic structure of (Ga,Mn)As revisited
Chalmers University of Technology, Göteborg, Sweden.
Chalmers University of Technology, Göteborg, Sweden.
University of Skövde, School of Engineering Science. University of Skövde, The Virtual Systems Research Centre. (Matematik och fysik)ORCID iD: 0000-0002-7023-4043
Department of Physics, University of Karachi, Pakistan.
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2017 (English)In: New Journal of Physics, ISSN 1367-2630, E-ISSN 1367-2630, Vol. 19, no 2, 1-8 p., 023006Article in journal (Refereed) Published
Abstract [en]

The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band carriers. Using angle resolved photoemission we show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs.

For Mn concentrations above 1% the band reaches the Fermi level, and can thus host the delocalized holes needed for ferromagnetic coupling. Overall, our data provide a firm evidence of delocalized carriers belonging to the modified host valence band.

Place, publisher, year, edition, pages
Institute of Physics (IOP), 2017. Vol. 19, no 2, 1-8 p., 023006
Keyword [en]
Dilute magnetic semiconductors, band structure, magnetic coupling
National Category
Condensed Matter Physics
Research subject
Natural sciences
Identifiers
URN: urn:nbn:se:his:diva-13328DOI: 10.1088/1367-2630/aa5a42Scopus ID: 2-s2.0-85014392815OAI: oai:DiVA.org:his-13328DiVA: diva2:1066728
Available from: 2017-01-19 Created: 2017-01-19 Last updated: 2017-05-23Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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