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Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As
Department of Applied Physics, Chalmers University of Technology, Gothenburg, Sweden.
Department of Applied Physics, Chalmers University of Technology, Gothenburg, Sweden / Department of Physics, University of Karachi, Karachi, Pakistan.
Department of Applied Physics, Chalmers University of Technology, Gothenburg, Sweden.
Institute of Physics, Polish Academy of Sciences, Warsaw, Poland / MAX-lab, Lund University, Lund, Sweden.
Vise andre og tillknytning
2011 (engelsk)Inngår i: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 23, nr 8, artikkel-id 085003Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.

sted, utgiver, år, opplag, sider
Institute of Physics Publishing (IOPP), 2011. Vol. 23, nr 8, artikkel-id 085003
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URN: urn:nbn:se:his:diva-5188DOI: 10.1088/0953-8984/23/8/085003ISI: 000287235700006Scopus ID: 2-s2.0-79951797257OAI: oai:DiVA.org:his-5188DiVA, id: diva2:429170
Tilgjengelig fra: 2011-07-04 Laget: 2011-07-04 Sist oppdatert: 2017-12-11bibliografisk kontrollert

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