Högskolan i Skövde

The quasiparticle wave function of a many-electron system is traditionally defined as the eigenfunction of the quasiparticle eigenvalue equation involving the self-energy. In this article a different concept of a quasiparticle wave function is derived from the general definition of the Green's function without reference to self-energy. The proposed quasiparticle wave function can decay in time, and in contrast to the traditional one it contains not only the main quasiparticle mode but also other modes due to coupling to collective excitations in the system. In the recently developed dynamical exchange-correlation potential formalism, this definition of a quasiparticle wave function leads to an equation of motion with an effective field, which appears to have a simple form expected to be amenable to realistic approximations. A simple model for the effective potential is proposed which is suitable for materials whose valence electrons are dominated by itinerant 𝑠−𝑝 electrons such as simple metals.

The exchange-correlation hole and potential of the homogeneous electron gas have been investigated within the random-phase approximation, employing the plasmon-pole approximation for the linear density response function. The angular dependence as well as the time dependence of the exchange-correlation hole are illustrated for a Wigner-Seitz radius r_s=4 (atomic unit). It is found that there is a substantial cancellation between exchange and correlation potentials in space and time, analogous to the cancellation of exchange and correlation self-energies. Analysis of the sum rule explains why it is more advantageous to use a noninteracting Green function than a renormalized one when calculating the response function within the random-phase approximation and consequently the self-energy within the well-established GW approximation. The present study provides a starting point for more accurate and comprehensive calculations of the exchange-correlation hole and potential of the electron gas with the aim of constructing a model based on the local density approximation as in density functional theory.

Although cuprate high-temperature superconductors were discovered already in 1986 the origin of the pairing mechanism remains elusive. While the doped compounds are superconducting with high transition temperatures T-c, the undoped compounds are insulating due to the strong effective Coulomb interaction between the Cu 3d holes. We investigate the dependence of the maximum superconducting transition temperature T-cmax on the on-site effective Coulomb interaction U using the constrained random-phase approximation. We focus on the commonly used one-band model of the cuprates, including only the antibonding combination of the Cu d(x2-y2) and O p(x) and p(y) orbitals and find a screening-dependent trend between the static value of U and T-cmax for the parent compounds of a large number of hole-doped cuprates. Our results suggest that superconductivity may be favored by a large on-site Coulomb repulsion. We analyze both the trend in the static value of U and its frequency dependence in detail and, by comparing our results to other works, speculate on the mechanisms behind the trend.

Orbital magnetization is known empirically to play an important role in several magnetic phenomena, suchas permanent magnetism and ferromagnetic superconductivity. Within the recently developed “modern theoryof orbital magnetization,” theoretical insight has been gained into the nature of this often neglected contributionto magnetism but is based on an underlying mean-field approximation. From this theory, a few treatments haveemerged which also take into account correlations beyond the mean-field approximation. Here, we apply thes cheme developed in a previous work [F. Aryasetiawan et al., Phys. Rev. B 93, 161104(R) (2016)] to thespin- 1/2 Haldane-Hubbard model to investigate the effect of charge fluctuations on the orbital magnetizationwithin the GW approximation. Qualitatively, we are led to distinguish between two quite different situations:(i) When the lattice potential is larger than the nearest-neighbor hopping, the correlations are found to boostthe orbital magnetization. (ii) If the nearest-neighbor hopping is instead larger than the lattice potential, thecorrelations reduce the magnetization. The boost and reduction are identified to stem from interband andintraband correlations, respectively, and the relative importance of the two varies with the strength of the latticepotential. We finally study graphene with parameters obtained from first principles.

The magnetic moment in a solid is usually associated with the electron spins but there is an additional contribution due to the orbital motion of the electrons. For a finite system such as an atom or molecule the orbital moment can be readily calculated. However, for a periodic system the formula used for finite systems becomes ill-defined due to the presence of the position operator. In the last decade a modern theory of orbital magnetization that allows for a rigorous calculation of the magnetic moment of periodic crystals has been developed. This article provides a survey of the theoretical development of this new topic as well as recent, albeit a few, applications of the new formula to real materials. Although the original theory was worked out for non-interacting systems, there has been recent progress in the theory of orbital magnetic moment of interacting electrons in solids. To include the effects of electron-electron interactions two approaches have been proposed, one based on current spin density functional theory and another on the many-body Green's function method. The two approaches are very different but both methods provide convenient yet rigorous means of including the effects of exchange and correlations beyond the commonly used local density approximation of density functional theory.

The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band carriers. Using angle resolved photoemission we show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs.

For Mn concentrations above 1% the band reaches the Fermi level, and can thus host the delocalized holes needed for ferromagnetic coupling. Overall, our data provide a firm evidence of delocalized carriers belonging to the modified host valence band.

Resonant in situ photoemission from Mn 3d states in Ga(1−x)MnxAs is reported for Mn concentrations down to the very dilute level of 0.1%. Concentration-dependent spectral features are analyzed on the basis of first-principles calculations for systems with selected impurity positions as well as for random alloys. Effects of direct Mn-Mn interaction are found for concentrations as low as 2.5%, and are ascribed to statistical (nonuniform) distribution of Mn atoms.

After two decades since the discovery of ferromagnetism in manganese-doped gallium arsenide, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of manganese-doped gallium arsenide. The experimental data are obtained through the differences between off- and on-resonance photo emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean field theory, using exact diagonalization as impurity solver. Theory is found to accurately reproduce measured data and illustrates the importance of correlation effects. Our results demonstrate that the manganese states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits-off from the valence band edge, whereas the induced holes seem located primarily around the manganese impurity.

The GW approximation takes into account electrostatic self-interaction contained in the Hartree potential through the exchange potential. However, it has been known for a long time that the approximation contains self-screening error, as is evident in the case of the hydrogen atom. When applied to the hydrogen atom, the GW approximation does not yield the exact result for the electron removal spectra because of the presence of self-screening: the hole left behind is erroneously screened by the only electron in the system that is no longer present. We present a scheme to take into account self-screening and show that the removal of self-screening is equivalent to including exchange diagrams, as far as self-screening is concerned. The scheme is tested on a model hydrogen dimer and it is shown that the scheme yields the exact result to second order in (Uο-Uι)/2t, where Uο and Uι are, respectively, the on-site and off-site Hubbard interaction parameters and t is the hopping parameter.